Fifth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The
IRFP250N TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole.
IRFP250N Features
• Advanced Process Technology
• Dynamic dv/dt Rating
•175°C Operating Temperature
•Fast Switching
• Fully Avalanche Rated
•Ease of Paralleling
•Simple Drive Requirements
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