Fairchild Semiconductor 1N4001

1 AMP GENERAL PURPOSE SILICON DIODES.

 

2 projects have used Fairchild Semiconductor 1N4001

 

• The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
• Construction utilizes void-free molded plastic technique
• Low reverse leakage
• High forward surge current capability
• High temperature soldering guaranteed: 250 C/10 seconds,0.375 ” (9.5mm) lead length, 5 lbs. (2.3kg) tension

 

 

3A/800V 50KHz Power Switch KA5L0380R

The Fairchild Power Switch (FPS) KA5L0380R product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch (FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM Controller integrates the fixed frequency Oscillator the under voltage lock-out, the leading edge blanking, the optimized Gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to Discrete MOSFET and PWM Controller or RCC solution, a Fairchild Power Switch (FPS) CAN reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.

2SC3320 HIGH VOLTAGE HIGH SPEED SWITCHING

The 2SC3320 is a triple diffused planer type high voltage high speed switching.

2SC3320 absolute maximum ratings: (1)VCBO: 500 V; (2)VCEO: 400 V; (3)VCEO(SUS): 400 V; (4)VEBO: 7 V; (5)IC: 15 A; (6)IB: 5 A; (7)Pc: 80 W; (8)Tj: +150 ℃; (9)Tstg: -65 to +150 ℃.

2SC3320 features: (1)high voltage, high speed switching; (2)high reliability.

2N3906 PNP General Purpose Transistor

The 2N3906 is the general purpose (PNP Silicon) PNP switching transistor, which is produced by Fairchild Semiconductor.

2n3906 absolute maximum ratings: (1)Collector–Emitter Voltage: 40 Vdc; (2)Collector–Base Voltage: 40 Vdc; (3)Emitter–Base Voltage: 5.0 Vdc; (4)Collector Current — Continuous: 200 mAdc; (5)Total Device Dissipation, TA = 25℃: 625mW; (6)Total Power Dissipation, TA = 60℃: 250 mW; (7)Total Device Dissipation, TC = 25℃: 1.5 Watts; (8)Operating and Storage Junction Temperature Range: –55 to +150℃.

2N3906 features: (1)Capable of 600mW of Power Disspation and 200mA Ic; (2)Lead free finish/ROHS compliant; (3)Epoxy meets UL 94 V-O flammability rating; (4)Moisure sensitivity level 1; (5)Through Hole pakage; (6)Marking: type number.